Half-polar InGaN semiconductor laser simulator
Analysis tool for semi-polar InGaN semiconductor lasers
Introducing a modeling approach that considers crystal coordinate systems, strain, and stress. Using 2D calculations in LASTIP as an example, comparing optical gain without internal electric fields between semi-polar, non-polar, and c-plane. A model based on k.p. theory for wurtzite-type MQW devices considering crystal growth direction is implemented in APSYS, LASTIP, and PICS3D.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
